| 摘要 |
PURPOSE:To provide memory function in an MOS transistor itself by controlling the amplitude of a voltage applied to the gate and drain of an MOS transistor formed on an insulator. CONSTITUTION:A sensing circuit 30 writes, erases and reads out information to control the amplitude and timing of a voltage applied to a gate 25 and a drain 23. The circuit 30 applies a voltage of the degree not generating an impact ionization to the drain 23 at writing time, applies a voltage of threshold value or higher to the gate 25, and then abruptly set the gate voltage to zero. It applies a voltage of the degree for generating impact ions to the drain 23 at erasing time, applies a voltage of threshold value of higher to the gate 25, and then abruptly sets the gate voltage to zero. It applies a gate voltage of threshold value or higher in the state that a voltage of the degree not generating an impact ionization is applied to the drain 23 at writing time. |
