| 摘要 |
PURPOSE:To reduce the disturbance in shape of stripes of recesses and projections in a diffraction grating by forming a patterned resist layer after depositing an InP layer on a GaInAsP layer and using this resist layer as a mask for etching. CONSTITUTION:At first, an InP layer 9 is deposited on a GaInAsP layer 2. Next, a patterned resist layer 8 is formed. Etching is done so far as the layer 2 is etched by using said resist layer 8 as a mask. Consequently, the diffraction grating in which the stripes of recesses and projections 4 are aligned in parallel is formed on the layer 2 with a layer 9 deposited on the front end of the stripes 4. Then, the layers 8 and 9 are removed to complete the diffraction grating 3. |
