发明名称 |
CONTACTS FOR SEMICONDUCTOR DEVICES |
摘要 |
A memory device includes a number of memory cells and a dielectric layer formed over the memory cells. The memory device also includes contacts formed in the dielectric layer and spacers formed adjacent the side surfaces of the contacts. The spacers may inhibit leakage currents from the contacts. |
申请公布号 |
US2008096348(A1) |
申请公布日期 |
2008.04.24 |
申请号 |
US20060551532 |
申请日期 |
2006.10.20 |
申请人 |
ADVANCED MICRO DEVICES, INC.;SPANSION LLC |
发明人 |
HUI ANGELA T.;LI WENMEI;NGO MINH VAN;JOSHI AMOL RAMESH;CHANG KUO-TUNG |
分类号 |
H01L21/8242 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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