| 摘要 |
PURPOSE:To enable a multi-functionating element b forming a single crystal AlP layer and multilayer thin-film superlattice layers consisting of AlInP and AlP onto an Si substrate and growing GaInP, AlInP, etc. on these layers. CONSTITUTION:As is implanted to an N-type or insulating Si substrate 1 to form an N<+> layer 2, and twenty layers in total of Se-doped AlP layers 3 and Se-doped AlP strain superlattice layers 4 under decompression, and a Se-doped Al0.5In0.5P clad layer 5, an undoped Ga0.5In0.5P active layer 6 and a Zn-doped Al0.5In0.5P clad layer 7 are shaped. An Al electrode 8 is formed through electron beam evaporation as one for leading out a lower layer electrode, PSG 9 for isolating an element is shaped, and Au 10 is formed through electron beam evaporation as an upper layer electrode. |
