| 摘要 |
PURPOSE:To give roundness to an angular upper corner edge produced by vertical etching of an Si substrate by applying a laser beam of visible ray range or ultraviolet ray range to the Si substrate after vertical etching. CONSTITUTION:A thermal oxide film 5 is formed on P-type (100) Si substrate 4. Then a pattern is formed with a positive type photoresist 6 and the thermal oxide film 5 is subjected to oriented etching by using the photoresist 6 as a mask. After the resist 6 is removed, the single crystal Si substrate 4 is etched and dipped into a buffer fluoric acid solution and the thermal oxide film 5 is removed and then an ArF excimer laser beam is applied. With this process, the Si surface layer is melted and an angular upper corner edge can be rounded.
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