| 摘要 |
PURPOSE:To decrease the sheet resistance and to increase the operating speed of the semiconductor device, by forming a base electrode on an external base on a substrate having a first insulation film, providing a second insulation film on the exposed surface of the base electrode and forming an internal base region and an emitter region within the collector region. CONSTITUTION:An insulation film 4 is formed on a p-type silicon substrate 1. An insulation layer 5 is formed only on the regions in which an emitter and a collector electrode are to be formed. Compensation diffusion is carried out in the apertures of the layer 5 to form p<+> type external base layers 6, on which tungsten layers 7 are formed. A silicide layer 9 is then formed and resist 10 is deposited to cover the region where a base is to be led out. The silicide layer 9 is etched with a mask of the resist 10 to form a silicide layer 11. Thereafter, the surface of the tungsten layer is anodically oxidized to form an oxide layer 12. The insulation layer 5 is etched by the use of the oxide layer 12 as a mask. A p<+> layer 13 and an n<+> layer 2a are formed by the ion implantation for providing an internal base region and an emitter region, respectively. A polycrystalline silicon layer 14 is then formed and the surface thereof is protected with an SiO2 layer 15. Finally, apertures for electrode contacts are provided therein.
|
