| 摘要 |
PURPOSE:To reduce FORBIDDEN regions, and to contrive to enhance wiring efficiency at a semiconductor integrated circuit device by a method wherein the gate electrode parts of transistors not being used at a CMOS gate array are used as signal wirings in place of second layer aluminium wirings. CONSTITUTION:A poly-silicon gate 7 is so formed as to make signal lines to be led out from both the edges of the gate thereof, the symbol 2 in the figure is an N<+> type diffusion layer and the symbol 3 is the GND (an aluminium wiring). A signal inputted from a first layer aluminium wiring 4a in the lateral direction passes through a poly-silicon layer connected to the gate contact 7, and transmitted to a first layer aluminium wiring 4e connected to a gate contact 8. Because the gate electrode parts are used like this without using second layer aluminium wirings, no FORBIDDEN region is generated. Accordingly, the second layer aluminium wirings 9a-9e in the longitudinal direction can be used. |
