| 摘要 |
PURPOSE:To reduce the area of a call and to increase the quantity of charge storage by connecting a switch element and a capacitive element for information storage in series and thus constituting a memory cell, and varying the potential of an electrode of the capacitive element which is not connected to the switch element when information is written. CONSTITUTION:The base of a P channel MOSFET element QP for a switch is connected to a word line WL, its source or drain is connected to a data line DL, and its drain or source is connected to the capacitive element for information storage, to which a reference potential VSS or electrode potential VCC is applied. Namely, a conductive plate 2 for applying the reference potential VSS or source potential VCC is put in a semiconductor plate 3 made of a U-shaped source or drain and constitutes the capacitive element C for information storage together with the plate 3 below it; and the part of this plate 3 is used as one electrode and the element C is used as the other electrode. Further, a switching element QP is provided at a part 3A facing the element C.
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