LDMOS HAVING A FIELD PLATE

摘要

Laterally diffused metal oxide semiconductor transistor for a radio frequency- power : amplifier comprising a drain finger (25,27) which drain finger is connected to a stack of one or more metal interconnect layers, (123,61,59,125 ) wherein a metal interconnect layer (123) of said stack is connected to a drain region (25) on the substrate, wherein said stack comprises a field plate (123, 125, 121, ) adapted to reduce the maximum magnitude of the electric field between the drain and the substrate and overlying the tip of said drain finger.