| 摘要 |
PURPOSE:To ensure the uniformity of treatment, such as oxidation, diffusion, etc. of a semiconductor article, and to prevent the generation of the warpage and crystal defects of the semiconductor article by lifting a stage for loading the semiconductor article to be thermally treated and surrounding the stage by a reaction furnace at a set position. CONSTITUTION:A wafer 21 is placed on a lowered stage 16, the stage 16 is elevated by a lifting drive 18, and the wafer 21 is inserted into a reaction furnace. The temperature of a heat pipe 12 is raised to a treatment temperature for the wafer 1 by a pressure controller 13, and a reaction gas is flowed in from a gas inflow port 19, thus thermally treating the wafer 21. The gas conducting heat treatment is discharged from a gas exhaust port 20. Treatment is completed, the reaction gas is stopped, a purge gas is made to flow, the temperature of the heat pipe 12 is lowered, and the wafer 21 is carried out of the reaction furnace according to a procedure reverse to on the setting of the wafer 21.
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