| 摘要 |
PURPOSE:To facilitate a circuit design of an LSI provided with a narrow channel MISFET and a wide channel MISFET by forming a channel stopper not contact with a channel region to eliminate a variation in the impurity density of the channel region, thereby suppressing the rise of a threshold voltage. CONSTITUTION:A channel stopper 4 is provided to surround a MISFET and not to contact with the channel region 3 of the MISFET on the lower portion of a field insulating film 5 around a transistor region 2. Accordingly, a variation in the impurity density of the channel region does not occur by a channel stopper even in a MISFET of a narrow channel width, and a vth substantially equal to the MISFET having a wide channel width is obtained. Accordingly, a circuit design of an LSI provided with the narrow and wide width MISFETs is facilitated to improve the characteristic yield.
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