| 摘要 |
Disclosed is a substitutionally strengthened silicon semiconductor material. A high concentration of germanium atoms is added to a silicon melt to thereby substitutionally displace various silicon atoms throughout the crystalline structure. The germanium atoms, being larger than the silicon atoms, block crystalline dislocations and thus localize such dislocations so that a fault line does not spread throughout the crystalline structure. In heavily boron doped P+ silicon substrates, the larger germanium atoms offset the crystalline shrinkage caused by the boron atoms, thereby equilibrating the silicon crystal size.
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