| 摘要 |
PURPOSE:To remove the generation of dislocations and defects by removing a nitride film and executing an oxidation process for a porous silicon layer. CONSTITUTION:N-type silicon island regions are formed completely, and the surface side of an silicon substrate 1 is changed into a porous silicon layer 6 with the exception of the N-type silicon is island regions 5 through anodic oxidation treatment. Nitride films 2 on each silicon island region 5 are etched to remove the nitride films 2. The porous silicon layer 6 is turned into a porous silicon oxide film 6' through oxidation treatment in a high-temperature steam atmosphere, and the silicon island regions 5 are electrically isolated mutually by the porous silicon oxide film 6'. Elements are shaped in the silicon island regions 5. Accordingly, the generation of dislocations and defects in the silicon island regions generated by the difference of the thermal expansion coefficients of silicon and the nitride film can be inhibited. |
