| 摘要 |
PURPOSE:To obtain a semiconductor laser that is easily integrated and oscillates in single longitudinal mode at the time of high-speed modulation with its oscillation wavelength less dependable on temperature, by providing a diffraction grating for distributed feedback vertical to the substrate. CONSTITUTION:A diffraction grating for distributed feedback 11 is provided near an oscillative region 10 so as to act in the direction vertical to a substrate 7 and parallel to the interface of a P+ diffusion region. In this semiconductor laser, light is produced in the oscillative region 10 when forward direction bias is applied between a p-electrode 1 and an n-electrode 8, however, only the light, which meets the Bragg's reflective condition which is determined by the cycle of the diffraction grating for distributed feedback, is amplified and oscillated since the light is weakly confined in transverse direction with larger leaking effect of light. Thus, the dependancy of the oscillation wavelength is made smaller, facilitating the operation in the single longitudinal mode at the time of the high-speed modulation. Moreover, this device does not require a cleavage plane as a resonator, making it possible to be integrated with other photo-elements. |
