| 摘要 |
PURPOSE:To decrease the number of elements and to reduce the occupation area using a transfer gate composed of a single-conduction type MOSFET, an inverter circuit, and an opposite-conduction type MOSFET. CONSTITUTION:When an A1 rises from L to H while a B1 is at an H level (VCC), the output of an inverter 1 begins to fall according to input/output characteristics of the inverter 1 as a potential of the 2 rises because an N channel type MOSFETQ1 is on, and when the output drops down to a potential Vcc-VTP, a P channel type MOSFETQ5 begins to turn on, so that the potential of the 2 is raised through a Q5. Consequently, the output of the inverter 1 further drops and the Q5 turns on, thereby raising the potential at 2 abruptly. The potential of the 2 rises up to the VCC and the output of the inverter 1 falls to zero V through said positive feedback operation. At this time, the potential of the 2 is not an intermediate potential, but at the level VCC, so no stationary through current flows through the inverter 1. Then, when the input signal A1 falls from H to L, a potential of the 1 rises up to VCC-VTP in the reverse process similarly and then the Q5 turns off completely, so that the potential of the 2 becomes as high as the potential of the A1.
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