EPITAXIAL WAFER OF GALLIUM ARSENIDE PHOSPHIDE

摘要

PURPOSE:To raise yield of a light emitting diode array useful as a light source of dielectric printer, having small variability of luminance, by forming at least one layer of a region to change discontinuously a mixed crystal ratio on a mixed crystal changing layer constituting epitaxial wafer of gallium arsenide phosphide mixed crystal. CONSTITUTION:Epitaxial wafer of gallium arsenide phosphide mixed crystal consists of a single crystal substrate, a gallium arsenide phosphide mixed crystal ratio changing layer formed on the single crystal substrate and a gallium arsenide phosphide mixed crystal ratio constant layer formed on the mixed crystal ratio changing layer. At least one layer having a region to change discontinuously the mixed crystal ratio is formed on the mixed crystal ratio changing layer. When a light emitting diode array is produced by using an epitaxial wafer thus obtained, the variability of luminance of each light emitting diode constituting the array is lessened and yield of the light emitting diode array is increased.