| 摘要 |
PURPOSE:To prevent obstacles caused by intake of a growing material solution during sliding of a base, by setting another second through hole between plural first through holes of a solution reservoir having the first through holes to store the growing mate rial solution and laying a semiconductor substrate having improved contacting proper ties with the growing material solution in the second hole. CONSTITUTION:Liquid-phase epitaxial growth is carried out by using both the freely sliding base 1 provided with the semiconductor substrate setting part 2 and the solution reservoir 4 having plural first through holes to store the growing material solution of semiconductor layer to be grown on the semiconductor substrate 3. Another second through hole is set between the first through holes of the solution reservoir 4. Then, the semiconductor substrates 7b-7f having improved contacting properties with the growing material solution are laid in the second through holes. When the base 1 is slid, the growth is carried out while retaining the brought growing material solution in the second through hole (e.g., bottom of the substrate 7c). The brought growing solution is taken in the space the base 1 and it by surface tension between the substrate 7c. Thus, variation of composition of the growing material solution is prevented to give a high-quality growth layer.
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