| 摘要 |
PURPOSE:To form solder bumps for a semiconductor device having stable strength against stress applied from the specified direction by a method wherein a shielding plate having an opening is interposed between a first metal electrode to be used as an anode and a second metal electrode constructed of a plating material and to be used as a cathode. CONSTITUTION:When a voltage is set to be applied between a first metal electrode 14 and a second metal electrode 15, a flow of metal ion is generated from the second metal electrode 15, and the flow thereof is led to the first metal electrode 14 through the opening 18 of a shielding plate 17. Moreover, a plating liquid is led to the opening 18 at the same time, plating is performed to the part corresponding to the pad 12 of the first metal electrode 14 according to the current of the metal ions, and the metal material is accumulated to form a projection. The area of the opening 18 of the shielding plate 17 is narrowed gradually in proportion to the advance of plating, the high concentration part of the metal ions is converged gradually to the central part, plating is performed in the condition having the large growth speed at the central part thereof, and a bump 19 having a semicircular section is grown to be formed on the first metal electrode 14.
|
