发明名称 MANUFACTURE OF MULTILAYER SEMICONDUCTOR DEVICE
摘要 PURPOSE:To contrive the improvement in utilization factor of a semiconductor device manufacturing device by forming a wafer-multiple lamination body in which multilayer semiconductor devices are arranged flatly in each layer by slicing the wafer laminated body comprising plural multilayer semiconductor device chips in only one direction after forming that, and by forming an intermediate connection circuit and a side plane circuit on the side plane of said wafer-multiple lamination body. CONSTITUTION:Elements 2 are formed on one side of a semiconductor wafer 1 and another side of this semiconductor wafer 1 is polished to reduce the thickness. Two of such wafers and a conductive film 3 are bonded mutually to form a set 4 of the semiconductor wafers 1. Then, plural sets of such semiconductor wafers 1 set 4 are bonded to form a wafer laminated body 6 comprising plural multilayer semiconductor ships Furthermore, such wafer laminated bodies 6 are laminated to form a wafer- multiple lamination body 66 which is sliced in only one direction to form a multilayer semiconductor device chip flat aggregate 7 in which plural multilayer semiconductor chips are arranged flatly. Next, after a side plane circuit 10 and an intermediate connection circuit 9 which connects plural layers one another are formed on the side plane of the aggregate 7, the aggregate 7 is cut apart into multilayer semiconductor device chips 8.
申请公布号 JPS61288456(A) 申请公布日期 1986.12.18
申请号 JP19850131012 申请日期 1985.06.17
申请人 FUJITSU LTD 发明人 KATO TAKASHI
分类号 H01L25/18;H01L25/065;H01L25/07;H01L27/00 主分类号 H01L25/18
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