| 摘要 |
PURPOSE:To prevent a cracking from happening by increasing the contraction and expansion properties by a method wherein a slit is provided in the longitudinal direction of a lower wiring at the step difference part of an intersectional region in the lower wiring of multilayer wiring. CONSTITUTION:An electrode contact window is formed on an insulating film 8 composed of silicon dioxde etc. formed on a semiconductor substrate 1 wherein element such as memory circuit etc. is formed and then a film such as aluminium etc. is formed on overall surface. Then the electrode contact window is patterned to form a lower wiring 3. The lower layer wiring 3 is composed of an electrode pad part 31 and a pad lead out part 32 while a slit 33 is provided in the intersectional region with an upper layer wiring to be formed in the next process. After covering the electrode pad part 31 etc. with resist etc., an interlayer insulating film 4 made of silicon dioxide etc. is formed. Moreover, an aluminium film etc. later formed is patterned to form the upper layer wiring 5. Finally plastic package etc. is provided.
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