| 摘要 |
PURPOSE:To enhance the accuracy in positioning of the patterns formed on a semiconductor wafer as well as to increase the productivity of the title exposing device by a method wherein a plurality of exposing operations on different patterns for a semiconductor wafer are performed using a mask. CONSTITUTION:The center point of the original picture 1a of a pattern and the optical axis of the optical system having a projection lens 3 and the like are brought in coincidence with each other, and an exposing process is performed. Then, the blinds 4a and 4b in X-axis direction and the blinds 5a and 5b in Y-axis direction are provided on the circumference of the optical axis of the optical system. Subsequently, the center point of the original picture 1b of a pattern and the optical axis of an optical system are brought in coincidence with each other by shifting a reticle 2 relatively to the optical system using the aove-mentioned shifting mechanism, and then an exposing process is performed. The positional relation of the original pictures 1a and 1b of the pattern in a sheet of reticle 2 has a very high degree of accuracy, and as the pattern original pictures 1a and 1b are reduction-projected on a semiconductor wafer, the amount of positional deviation of the pattern original pictures 1a and 1b can be neglected virtually. Also, there is no rotational deviation between the pattern original pictures 1a and 1b, and the replacing time of the reticle 2 including the correcting time for a rotational deviation is unnecessitated.
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