| 摘要 |
PURPOSE:To isolate a P channel transistor and an N channel transistor, and to prevent a latch-up effectively by a small area by cutting a groove to the surface of a semiconductor substrate. CONSTITUTION:An insulating film 18 is buried and formed into a groove 15 cut onto a semiconductor substrate 14. In such constitution, an N-P-N type transistor faultily shaped by an N<+> diffusion layer 8, the P-type semiconductor substrate 14 and an N-well 11 is isolated by the groove 15. Accordingly, a latch-up can be prevented without requiring a large area. |
