发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To obtain excellent dampproofing and corrosion resistance by bringing a semiconductor device after wire bonding into contact with a nonaqueous solvent, into which an organic substance generating a metal-organic matter compound insoluble to water is dissolved, forming a compound and sealing the semiconductor device with a resin. CONSTITUTION:Triazoles are preferable as a compound formation type organic matter. A chip such as a silicon chip 1 is mounted onto lead frames 2, and Cu wires 3 are bonded with Ag electrodes 4 for the lead frames 2 and Al electrodes 5 for the silicon chip 1. The semiconductor device is dipped into an ethyl alcohol solution into which benzotriazole is dissolved, a compound of a metal-the organic matter is shaped on the surface, and the semiconductor device is pulled up from said solution and dried. Ag-benzotriazole films 6 are shaped onto the surfaces of the Ag electrodes 4 for the lead frames, Cu- benzotriazole films 7 onto the surfaces of the Cu wires 3 and Al-benzotriazole films 8 onto the surfaces of the Al electrodes 5 for the silicon chip 1, and these films, chip, wires, electrodes, etc. are sealed with a sealing resin 9.
申请公布号 JPS61287155(A) 申请公布日期 1986.12.17
申请号 JP19850128068 申请日期 1985.06.14
申请人 HITACHI LTD 发明人 KOBAYASHI SHIRO;ITO MASAHIKO;MINATO AKIRA
分类号 H01L23/02;H01L21/56;H01L23/28;H01L23/29;H01L23/31;H01L23/49 主分类号 H01L23/02
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