| 摘要 |
PURPOSE:To generate high light emitting efficiency and low current threshold by forming a region for emitting a light in thickness of the degree capable of locally disposing electrons in a direction for supplying a current and a space fluctuation of a potential of the degree of lcoally disposing an exciter even in a vertical surface thereto. CONSTITUTION:A P-type Al0.45Ga0.55As layer 31 doped with Be in the same degree is grown on the prescribed thickness on a P-type GaAs substrate 30 doped with Zn in high density by a molecular beam growing unit, and temperature for depositing As at the final stage is set lower than the optimum temperature for growing on a mirror surface. Thus, an AlGaAs layer 33 grown in an insulator state is obtained. Thereafter, the temperature is returned to the optimum value, a plurality of AlGaAs-GaAs layers are alternately grown. The portion 43 of the projection becomes a thin active layer, and a recess portion 42 becomes a thick active layer. Accordingly, the projection has potential higher than the recess portion to form space fluctuation to locally dispose electrons, holes and exciters in the recess.
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