| 摘要 |
A gate turn-off thyristor (1) can be turned off by shorting the gate and cathode leads. This is done by a controllable semiconductor device (3) which is connected, on the one hand, to the gate lead and, on the other, to the cathode terminal of a diode (2) which is in turn connected in series with the gate turn-off thyristor on the cathode side. Consequently, bipolar power semiconductor devices having a current-carrying capacity to match the thyristor or MOS semiconductor devices having higher forward voltages can be used as a short-circuiting, controllable semiconductor device. <IMAGE> |
