| 摘要 |
PURPOSE:To enable the formation of a fine pattern of submicron order by forming a projection pattern by patterning using lithography and using the remaining coating film pattern whose volume is reduced by oxidation of the coating pattern for forming said projection pattern as an etching-resistance mask. CONSTITUTION:A non-oxidizable intermediate film 13 is arranged on a forming material 12 for forming a pattern and a coating film 14 which reduces its volume consequently on oxidation is formed on the intermediate film 13. Then, this film 14 is patterned by lithography to form a projection pattern. The coating film pattern 14' for forming said projection pattern is oxidized to grow an oxide film 15. Next, this oxide film 15 is removed to expose the remaining coating film pattern 14'' which is used as a mask for etching to form a fine pattern 12' on the pattern-forming material 12.
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