| 摘要 |
PURPOSE:To form desired wirings on an electron element, to form a film in high quality and efficiency by exposing the element with material gas containing desired metal or semiconductor as a component, and scanning the element while emitting an ion beam containing the metal or the same element as the semiconductor as a component or a beam of ultrafine particles. CONSTITUTION:An electron element 3 is exposed with material gas containing desired metal or semiconductor as a component, any of an ion beam 2 containing metal contained in the gas or the same element as the semiconductor as a component or a beam of ultrafine particles and the element 3 or both are moved to scan the beam while emitting the beam 2 or the beam of the ultrafine particles on the element 3 by finely condensing to accumulate the metal or the semiconductor on the element 3 to form a film. For example, when the material of the film is aluminum, Al(CH3) is used as the gas, the aluminum ion beam is emitted to decompose the gas to form an aluminum film. When the material is Si, SiH4, SiCl4, or Si2H6 is used as the gas, and an Si film is formed in combination of the material and an Si ion beam.
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