发明名称 MAGNETIC BUBBLE MEMORY ELEMENT
摘要 PURPOSE:To improve the operation margin in a connecting part by using a micro-ion beam for forming a boundary part, varying the strength continuously, and slowing down an energy variation to a magnetic bubble in a boundary part. CONSTITUTION:In a model figure of a sectional shape 12 and a strength distribution of a micro-ion beam for forming a boundary part of an ion implanting transfer line and a permalloy transfer line, the sectional shape of the micro-ion beam can be controlled to a desired diameter (0.1-10mum), also shows a perfect circle, and the strength of this ion beam usually shows a Gaussian distribution. When the upper face of the bubble film is scanned by using the micro-ion beam having such a strength distribution, a distortion in the bubble film which has formed by an ion implantation becomes large and small in the center part of the ion beam and the end part, respectively, and a shape of a distortion distribution extending from the center to the end part becomes gently-sloping and continuous.
申请公布号 JPS61284894(A) 申请公布日期 1986.12.15
申请号 JP19850126019 申请日期 1985.06.12
申请人 HITACHI LTD 发明人 IMURA AKIRA;KOYAMA NAOKI;UMEZAKI HIROSHI;SUZUKI MAKOTO
分类号 G11C11/14;G11C19/08 主分类号 G11C11/14
代理机构 代理人
主权项
地址