| 摘要 |
<p>PURPOSE:To reduce the crosstalk due to adjacent picture elements by effecting a deterioration of a film quality irradiating a strong light to amorphous silicon films lying under a wire of a gate electrode of the thin film transistor comprising the amorphous silicon of each picture elements from the back of a substrate. CONSTITUTION:Drain electrodes 12a, 12b and source electrodes 14a, 14b are provided on a transparent insulating substrate 10 respectively, and then, the amorphous silicon (a-Si) film 20 is laminated on the subtrate. Further, the gate insulating film 22 is laminated on the film 20, and the gate electrode wiring 18 is provided on the film 22, thereby forming the a-Si thin film transistor corresponding to plural picture elements. A shading mask is provided at the underpart of the transparent insulating substrate 10 to irradiate the strong light L to only a -Si film lying under the gate electrode wiring, thereby effecting the deterioration of the film quality in the part of the a-Si film 20 which is irradiated the light. Thus, the crosstalk due to the adjacent picture elements may be reduced.</p> |
