| 摘要 |
PURPOSE:To eliminate the unfavorable effect of secondary electrons by forcing a target on which vapor from an evaporating source is deposited to be held at negative potential with an external power source so that secondary electrons are prevented from reaching the target. CONSTITUTION:A target 4 such as a GaAs semiconductor substrate is set in an evacuated bell jar 1, and it is forced to be held at negative potential with an external power source 5. A sample (evaporating source) 2 insulated electrically from the target 4 is heated by irradiating electron beams, and vapor generated from the surface of the sample 2 is deposited on the target 4. By this method, secondary electrons are almost prevented from reaching the target 4, so the unfavorable effect of secondary electrons is well eliminated. |
