FORMATION FOR AMORPHOUS SILICON GERMANIUM FILM

摘要

PURPOSE:To obtain a film with few defects in high velocity without producing a powdery material by separating the inside of a vacuum vessel into a plasma generation chamber and a film formation chamber, taking out plasma on a substrate and efficiently transporting an ion and a radical on the surface of the substrate. CONSTITUTION:The inside of a vacuum vessel is divided into a film formation chamber 2 and a plasma generation chamber 5. A gas for generating plasma is introduced into the generation chamber 5 via an introduction port 10. Then microwave electric power is impressed to this gas via a waveguide 4 of the microwave to generate plasma. The plasma is conducted to the above-mentioned film formation chamber 2 and a gas contg. Si and Ge is introduced into this chamber 2 via an introduction port 11. Thereafter this gas is brought into contact with the above-mentioned plasma and an amorphous SiGe film contg. hydrogen atom and/or halogen atom is formed on the surface of a substrate 1.