| 摘要 |
<p>PURPOSE:To prevent leakage of exposing light even under foreign matter and to decrease a pinhole defect rate of a photomask by forming a pattern image, by scanning of an electron ray, on a photosensitive material film on the photomask and applying the electron ray, after the end of scanning, to the part where exposing is obstructed by the foreign matter. CONSTITUTION:A sensor 11 detects the secondary electron 12 generated when the electron ray 11 is irradiated on the foreign matter during the scanning by the electron ray. The sensor calculates the position of the foreign matter 10 relative to a photomask 1 and stores the information on the calculated position into a memory in a controller 3. The position of the foreign matter 10 is indexed from the calculated position after the end of the scanning for forming a pattern image onto the photosensitive material film 1c on the mask 1, then the electron ray 7 is applied diagonally with respect to the mask 1 as shown by a solid line 7a or broken line 7b to irradiate the photosensitive material film part 1d under the foreign matter 10. The part 1d is thus subjected to the exposing treatment as well.</p> |
