摘要 |
<p>PURPOSE:To prevent a photoresist from intruding into a pattern corner section by a method wherein a photoresist is applied on a substrate, the photoresist is exposed with a mask with specified pattern which has arching or obtuse angled, corner sections and is developed. CONSTITUTION:A photoresist is applied on a large substrate such as silicon wafer, stainless steel plate, aluminum or copper and formed. Then, the specified pattern is photo-irradiated through a super-high-pressure marcury lamp, etc. At that time, an arching or obtuse angled mask is used for the corner sections of specified pattern, and the exposed photoresist is developed, thereby making it possible to form a cornerless photoresist pattern without intrusion into the pattern corner sections.</p> |