发明名称 PATTERN FORMATION OF PHOTORESIST
摘要 <p>PURPOSE:To prevent a photoresist from intruding into a pattern corner section by a method wherein a photoresist is applied on a substrate, the photoresist is exposed with a mask with specified pattern which has arching or obtuse angled, corner sections and is developed. CONSTITUTION:A photoresist is applied on a large substrate such as silicon wafer, stainless steel plate, aluminum or copper and formed. Then, the specified pattern is photo-irradiated through a super-high-pressure marcury lamp, etc. At that time, an arching or obtuse angled mask is used for the corner sections of specified pattern, and the exposed photoresist is developed, thereby making it possible to form a cornerless photoresist pattern without intrusion into the pattern corner sections.</p>
申请公布号 JPS61281528(A) 申请公布日期 1986.12.11
申请号 JP19850123568 申请日期 1985.06.06
申请人 MITSUBISHI ELECTRIC CORP 发明人 MAEJIMA TARO;ENDO ATSUSHI;HIROSE ETSUKO;SHIROMOMO AKIRA
分类号 H01L21/30;G03C5/08;G03F1/00;G03F1/68;G03F1/70;G03F7/20;H01L21/027 主分类号 H01L21/30
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