| 摘要 |
PURPOSE:To allow film formation and etching in various mode by providing a pair of removable spatter electrodes facing each other at both sides of ion flow formed in a vacuum chamber with an ion generator. CONSTITUTION:When an ion flow generation source 2 is activated, filling gas is separated into ion and electrons within the ion flow generator 2, of which only ion is injected into a vacuum chamber 1. In that way, when charged particles are supplied into the vacuum chamber 1, discharge is produced between spatter electrodes 4 and 4' even if the pressure is reduced. When a target is placed on the sputter electrode 4, a substrate 19 is placed on the sputter elec trode 4', an upper shutter 8 is closed, a lower shutter 8' is opened, and high-fre quency voltage is applied so that the substrate 19 possesses negative potential, then the surface of the substrate is sputter-etched. Then, when high-frequency voltage is applied so that the upper sputter electrode 4 possesses negative poten tial, a target material film without impurity on the clean surface of the substrate can be formed, thereby allowing film formation and etching in different mode.
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