| 摘要 |
PURPOSE:To obtain a semiconductor device, which has the wiring to be never disconnected, is highly reliable and has an improved integration degree, by a method wherein the step to be made due to the opening part, which is formed on the interlayer insulating film, is filled with a metal film and is flattened. CONSTITUTION:An opening part 2 is formed on an interlayer insulating film 1 on a lower layer wiring layer 5, which is formed on the surface of a silicon substrate 10. Then, alkoholic solution containing metal compound, such as platinum chloride, is applied on the whole surface of the interlayer insulating film 1 including the opening part 2, the solution is dried and the opening part 2 is filled with the platinum chloride. Subsequently a sintering is performed and a platinum film (Pt film) 6 is formed on the insulating film 1. Then, an Al film 7 is deposited on the whole surface, the Al film 7 and the Pt film 6 are patterned and an upper layer wiring layer 8 is formed. In the two-layer wiring layer to be formed is such a manner, the opening part 2 of the interlayer insulating film 1 is filled with the Pt film 6 and becomes flat. For that, the Al film 7 to be formed thereon is securely connected with the lower layer wiring layer 5 and it is eliminated that a disconnection is caused in the upper layer wiring layer 8.
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