发明名称 COMPLEX SEMICONDUCTOR LASER
摘要 PURPOSE:To provide an erasing function in addition to a reading function and a writing function while an optical system is kept simple by a method wherein at least two semiconductor lasers are formed on a same semiconductor substrate and the longitudinal position of the end surface of the resonator of at least one semiconductor laser is different from the positions of the end surfaces of the resonators of the other semiconductor lasers. CONSTITUTION:Two VSIS structure semiconductor lasers which have waveguide paths in which horizontal steps of effective refractive index are formed at the parts of two stripe shape grooves 3 and 4 are formed on a GaAs block layer 2 in parallel. Two etched mirror surfaces 141 and 142, whose positions to the longitudinal direction of resonators are different, are formed and, at the same time, electrical elements of the two semiconductor lasers are separated. After a mask of three-layer structure of AZ/Ti/AZ is removed in O2 plasma and CF4 plasma, negative side electrodes 9 and a positive side electrode 10 are formed. Finally, an integrated chip of a reading and writing semiconductor laser LD1 and an erasing semiconductor laser LD2, whose mirror surface positions are different from each other on the emission side of the resonators, is cut out by a method such as cleaving.
申请公布号 JPS61280693(A) 申请公布日期 1986.12.11
申请号 JP19850121494 申请日期 1985.06.06
申请人 NEC CORP 发明人 MATSUMOTO SHOHEI;FURUSE TAKAO
分类号 H01S5/00 主分类号 H01S5/00
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