| 摘要 |
PURPOSE:To obtain a distributed feedback type, a distributed Bragg type or a buried type semiconductor laser with significantly improved high frequency response characteristics by a method wherein a BH-LD mesa stripe formed on a semi-insulating substrate is so formed to have a depth reaching the semi- insulating substrate and N-type and P-type electrodes are formed in series to the axial direction of laser resonance. CONSTITUTION:A mesa stripe 13 is formed on a semiconductor wafer with a double-hetero structure. Further, high resistance InP layers 12 are made to grow in groove 24 parts only by burying growth. Then, in order to form an N-type electrode, a part of an element is etched to the depth reaching an activation layer and, after the surface of an N-type InP layer 5 is exposed, the N-type electrode 9 is formed on that surface. In the activation layer part, a P-type electrode 11 and the N-type electrode 9 are provided in series along the axial direction of the laser resonance and an element which oscillates at the wavelength band of 1mum and has an InP substrate and an InGaAsP activation layer is completed.
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