| 摘要 |
PURPOSE:To form the microscopic aluminum wirings of a semiconductor device without generating a step part by a method wherein the aluminum wiring layers are isolated from each other by the aluminum oxide film, which is selectively formed in the aluminum layers, and are formed. CONSTITUTION:A contact hole 13 is opened in an interlayer insulating film 12 on a silicon substrate 11. After that, after an aluminum film 14 is adhered on the whole surface of the substrate, an SiO2 film 15 is deposited, an aluminum film 16 is deposited thereon as a mask for ion-implantation, this aluminum film 16 is dryly etched and the wiring forming parts are removed. Then, an ion-implantation of oxygen ions 17 is performed through the mask 16. Aluminum wiring layers 18 and 19 are electrically isolated from each other by an insulative aluminum oxide film 20, but a step 21 to generate on the surface of the oxide film 20 is slight and even though the film thickness of the step reaches a maximum, that is no more than 25% of the film thickness of the aluminum film 20.
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