| 摘要 |
PURPOSE:To form uniformly a deposited film consisting of a-GeO and having uniform quality on a base body by acting heat energy to a compd. contg. Ge and halogen and an active seed formed of an oxygen-contg. compd. to effect a chemical reaction. CONSTITUTION:The compd. contg. Ge and halogen such as GeF4, Ge2Cl6, (GeBr2)5 or GeHI and the active seed which interacts chemically with said compd. and is formed of the oxygen-contg. compd. for film formation are respectively introduced into a film forming space for forming the deposited film on the base body. The above-mentioned active seed is formed by applying the energy of the electricity, heat, light etc. such as microwave, heater heating or light energy to the oxygen-contg. compd. such as O2, O3, H2O, SO2 or CO. The introducing ratio of the above-mentioned two materials is preferably in an about 10:1-1:10 range. The heat energy by a heating element, high frequency, light energy, etc. is then acted thereto to effect the chemical reaction. The deposited film of the a-GeO having the excellent electrical characteristics, etc. is thereby formed on the base body. |
