摘要 |
PURPOSE:To perform a stabilized vapor-deposition irrespective of the quantity of the substance to be vapor-deposited located in a crucible by a method wherein a power source is provided for each of the electron bombardment filament which are in the different positional relations with the crucible. CONSTITUTION:The crucible 2 containing the substance 3 to be vapor-deposited is heated up by an electron bombardment filament 4, and the cluster ion beam 9 of the vapor jetted out from the crucible 2 is ionized by the irradiation with electrons on the substance 7 to be ionized. Then, the ion beam 9 is collided against a substrate 10 using an accelerating electrode 8, and a thin film is formed on the substrate 10. Each line of the filaments 4 is arranged in the different positional relation with the crucible 2, and power sources 11, 12 and 13 are independently provided on each line. The condition of heating is adjusted in accordance with the temperature distribution generated inside the crucible corresponding to the decrease of the vapor-deposition substance 3.
|