| 摘要 |
PURPOSE:To obtain high conversion efficiency even if an area is large, by utilizing the self-bias property of a P-I-N junction on a glass substrate, oxidizing a shorted part self-selectively in an oxidizing gas and insulating the shorted part. CONSTITUTION:A photoelectric conversion device is composed of a glass substrate 1, a light transmitting conducting film 2, a P-type SiC non-single crystal semiconductor 3, an I-type non-single crystal silicon semiconductor 4, an N-type silicon, silicon nitride or silicon carbide non-single crystal semiconductor 5 and an ITO 6. A shorted part 8 is present in a semiconductor 7. The photoelectric conversion device is placed in a reactive container 18, which is filled with an oxide ion gas. The gas is made to be a plasma glow discharge atmosphere 14. A DC voltage 13 is applied across the layer 2 and the electrode 12. As a result, the shorted part 8 is oxidized 10 and insulated. Thereafter annealing is carried out. Then aluminum 9 is provided as an electrode on the back surface. |
