| 摘要 |
PURPOSE:To fine a semiconductor device, and to improve the degree of integration by irradiating a base body to be treated in a predetermined etching gas or deposit gas by a plurality of beams approximately vertically and alternately. CONSTITUTION:Wavelength XeF laser beams (350nm) are used as beams from a first light source 16, and F2 excimer laser beams (157nm) are employed as beams from a second light source 19, Cl2 as a reactive gas introduced into a vessel 11 is dissociated by first beams 25 to form Cl radicals, and the Cl radicals etch an N<+> poly Si film 22 as a sample to be etched. On the other hand, Si(CH3)4 gas as a gas for deposition is dissociated by second beams 26, and a nonvolatile deposit film 24 is shaped onto the surfaces of the N<+> poly Si film 22 and a mask 23. The film 24 deposited on the N<+> poly Si film 22 protects the N<+> poly Si film 22 from Cl radicals while the deposit film 24 functions as a protective film on a pattern side-wall 28, thus preventing an under-cut. A vertical etching shape is obtained by repeating the cycle.
|
