| 摘要 |
PURPOSE:To obtain a high heat-resistant electrode by interposing a thin layer doped with metal for suppressing surface level in high density between a compound semiconductor layer readily forming a surface level and an ohmic electrode made of high melting point metal or silicide when providing the electrode on the layer. CONSTITUTION:An N<+> type GaAs layer 2, an N-type GaAs layer 3, a P<+> type GaAs layer 4, an N-type AlGaAs layer 5 and an N<+> type GaAs layer 6 are sequentially laminated and grown by a molecular beam crystal growing method on a semi-insulating GaAs substrate 1. An Si is used for the N-type impurity element, a Be is used for the P-type impurity element, and the impurity densities of the layers 2, 3, 4, 5, 6 are respectively 1X10<19>, 3X10<16>, 5X10<18>, 5X10<17>, 1X10<19>/cm<3>. Then, an InGaAs layer 7 forming the feature of this method is adhered to the thickness of monomolecular layer on the layer 6 in density of 1X10<14>, and an emitter electrode 8 is formed of Mo, Au, WSi, etc. thereon. Thus, the electrode 8 having neither characteristic deterioration nor degradation of quality is obtained.
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