发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To facilitate the recovery of chips by dissolving a spacer life-OFF material in a magnetic field to remove an unuseful metal, thereby preventing an ultrafine pattern from damaging due to the chips. CONSTITUTION:A resist pattern 11 is formed on a GaAs substrate 12, and an AuGe-Ni film 13 is deposited. GaAs substrate 12 and a magnet 15 are opposed in methylethylketone 16, a supersonic vibration is applied, and the unnecessary portion of the film 13 is lifted OFF to form electrodes. Since the separated film 13 contains Ni, it is attracted to the magnet 15. With this construction, the yield is improved, and resources are saved.
申请公布号 JPS61276348(A) 申请公布日期 1986.12.06
申请号 JP19850117867 申请日期 1985.05.31
申请人 NEC CORP 发明人 KATSUKAWA KIMIAKI
分类号 H01L21/3205;H01L21/302;H01L21/3065 主分类号 H01L21/3205
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