| 摘要 |
<p>PURPOSE:To easily enable the formation of the alignment mark of the X-ray mask and the alignment mark of the semiconductor substrate as well as to obtain an X-ray exposure align ment method with a superior alignment precision by a method wherein parallel X-rays of a single wavelength are respectively projected on the single crystal to be formed in the internal side of the X-ray mask and the single crystal to be formed in the semiconductor substrate, the refracted X-rays from the single crystals are made incident in the scintillator, the positions of the single crystals are detected by the scintillations from the scintillator and the positioning of the X-ray mask to the semiconductor substrate and the adjustment of the interval between the X-ray mask and the substrate are conducted. CONSTITUTION:Parallel X-rays 9; which are fine, are emitted at an interval narrowed in a dimension enough to make a first single crystal 4 bathed completely in the X-rays and have a single wavelength in wavelength; are projected on the first single crystal 4; which is formed in the internal side of the X-ray mask consisting of an X-ray transmitting film 1 and X-ray absorbers 2 and has a diameter of several nm or less; in such a way that the first single crystal 4 is completely bathed in the X-rays, refracted X-rays 11 to correspond to the specific reflection indexes (h), (k) and (l) from the first single crystal 4 are made to incide in a scintillator 134 and the position of the X-ray mask is detected by the scintillations from the scintillator 13.</p> |
