| 摘要 |
PURPOSE:To obtain an ultrafine and inversely tapered resist pattern by forming a positive type far ultraviolet sensitive resist film on a semiconductor substrate, exposing it to far ultraviolet ray, and then shower-developing it, thereby controlling the solution of a light creepage without wearing the film. CONSTITUTION:A positive type far ultraviolet sensitive resist is applied and dried on a semiconductor wafer, exposed to far ultraviolet ray while varying the exposure amount, and a pattern of approx. 0.5mum is transferred. Then, a wafer is rotated under the condition of 1,000rpm, methylethylketone-xylene developer is blown by shower system for approx. 15sec, and the wafer is rinsed with xylene for approx. 10sec. to obtain the desired inverted tapered resist pattern. Here, far ultraviolet ray exposure of the resist film is performed in the quantity of light of 1,200mJ/cm<2> or higher, thereby controlling the solution of a light creepage without wearing the film. |
