SEMICONDUCTOR LIGHT-EMITTING DEVICE

摘要

PURPOSE:To prevent the deterioration of performance due to the temperature rise of a light- emitting section and the shortening of life, etc. due to mechanical stress by forming a current concentration layer, which is interposed between an upper electrode and an upper clad layer and selectively passes currents only into a light-emitting region, by a semi-insulating semiconductor layer. CONSTITUTION:One conduction type clad layer 2, an active layer 3, a reverse conduction type clad layer 4 and a reverse conduction type contact layer 5 are laminated onto one conduction type semiconductor substrate 1 in succession, two strips of grooves separating and demarcating an operating region consisting of the layer 5, the layer 4, and the layer 3 are shaped, buried layers 6a and 6b composed of a semi-insulating semiconductor are formed into the grooves, a current concentration layer 7 consisting of the semi-insulating semiconductor is shaped onto the layer 5, a contact window 8 is formed in the operating region in the layer 7, and an electrode 9 is shaped into the window 8 and onto the layer 7. The current concentration layer 7 shaped between the electrode 9 and the layer 5 is formed by the semi- insulating semiconductor layers 6a, 6b, thermal conductivity thereof is larger than the insulating film and a thermal expansion coefficient of which is approximately the same as the operating region. Accordingly, heat generated in the operating region is dissipated to the outside, and mechanical stress generated between the operating region and the layer 7 is reduced.