MOLECULAR BEAM EPITAXIAL GROWTH METHOD FOR INGAALAS CRYSTAL LAYER

摘要

PURPOSE:To obtain the titled crystal layer having excellent electrical and optical characteristics by forming a specified crystal layer through an InP crystal layer formed on an InP crystal substrate by the molecular beam epitaxial growth method. CONSTITUTION:An InxGa1-x-yAlyAs crystal layer (10<=x<=0.9, 0.1<=7<1 and x+y=1) is formed on an InP crystal substrate by the molecular beam epitaxial growth method in the molecular beam epitaxial growth method of an InGaAlAs crystal layer. In the method, an InP crystal layer is formed on the InP crystal substrate by the molecular beam epitaxial growth method, before the InxGa1-x-yAlyAs crystal layer is formed on the InP crystal substrate. In the molecular beam epitaxial growth method of the InGaAlAs crystal layer, the InP crytal layer is formed in >=0.3mu thickness and hence an InP crystal layer having crystal defects upto the surface is not formed.