METHOD AND DEVICE FOR FORMING COMPOUND SEMICONDUCTOR THIN FILM

摘要

PURPOSE:To obtain the titled thin film with less lattice defects and impurities by introducing a hydride contg. an H2 carrier gas and a trace of a group V or VI element over a substrate and alternately introducing specified org. metallic compd. and hydride. CONSTITUTION:A substrate 1 is set on a substrate supporting stand 4 in a reaction vessel 3 and heated by a heating device 5. Then a hydride which is diluted to the first concn. wherein a group III-V compd. or a group III-II compd. is not formed by the reaction with an organometlalic compd. and which contains a group-V or a group-VI metal and an H2 carrier gas are always introduced into the reaction vessel 3 through a pipeline 6 by regulating valves V1 and V2. The hydride diluted with H2 to the second concn. which is higher than the first concn. and the organometallic compd. which is diluted with H2 and contains a group-III or a group-II element are laternately introduced by operating valves V3-8 at regular intervals of time set by a controller 7 and thermal decomposition is carried out to form a group III-V or a group II-VI compd. semiconductor crystal thin film on the substrate 1.