| 摘要 |
<p>PURPOSE:To suppress the characteristic change by the irradiation of light to an MSI element and to prevent the deterioration on image quality under the irradiation of light by providing the 1st and 2nd opaque conductive films on both sides in such a manner that the light is not directly irradiated on a semi-insulating film. CONSTITUTION:A transparent conductive film and the 2nd opaque conductive film 5 are continuously deposited on the substrate 1. The 2nd conductive film 5 and transparent conductive film are selectively etched to the shape of picture element electrodes 2. The semi-insulating film 3 is deposited thereon by plasma CVD, photo-CVD, vacuum CVD, etc. and thereafter the 1st opaque conductive film is deposited thereon in continuation therewith. The 1st conductive film and the semi-insulating film 3 are selectively etched to the shape of line electrodes 4 and the exposed 2nd conductive film is removed as well. The hydrogen-contg. film having the excellent characteristics is obtainable for the film 3 by using SiH4. Since the MSI element is formed of the 1st opaque conductive film-semi-insulating film-2nd opaque conductive film, the upper and lower parts of the semi-insulating film are shielded from light. The incidence of the light from the side face of the semi-insulating film is of a low level and therefore the characteristics of the MSI element are less changed by the irradiation of the light.</p> |
